Dispersive readout of ambipolar quantum dots
Electron and holes each offer different advantages as spin qubits. We report measurements of ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ability to supply ambipolar carrier reservoirs to the silicon channel allows us to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition of both electron and hole double quantum dots.
