Electron spin readout in a CMOS device

Electron spin readout in a CMOS device diagram

We report the first measurements of an electron spin in a device fabricated using 300mm wafer scale processing. On a single split-gate transistor, we demonstrate sensitive and compact spin readout using a single-electron box. We find electron spins in these devices have long relaxation times, in excess of several seconds. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.

arXiv paper